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Medium low pressure Field effect transistor
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Medium low pressure Field effect transistor
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Part Number
Package
Configuration
Type
ESD
Diode
VDS
(V)
VGS
(±V)
RDS(ON) (mΩ max) at VGS=
Qg
(nC)
IDS (A) Max.
PD (W) Max.
Date
Added
Image
Pdf
Samples
Order
10V
4.5V
2.5V
1.8V
25°C
70°C
25°C
70°C
MI9412N
MI9412N
SO-8
Single
N
No
30
20
22
36
4
9
7.4
3.1
2
MI9410N
MI9410N
SO-8
Single
N
No
30
20
24
33
4
8.1
6.5
3.1
2
MI6930N
MI6930N
SO-8
Dual
N
No
30
20
40
55
4
5.5
20
2.1
1.3
MI6612NE
MI6612NE
SO-8
Single
N
Yes
30
20
22
30
4
9.4
7.4
3.1
2
MI6612N
MI6612N
SO-8
Single
N
No
30
20
22
30
4
9.4
7.4
3.1
2
MI4998N
MI4998N
SO-8
Dual
N
No
30
12
32
40
6
6.5
5.3
2
1.3
MI4994N
MI4994N
SO-8
Dual
N
No
100
20
80
95
10
4.2
3.3
2.1
1.3
MI4992N
MI4992N
SO-8
Dual
N
No
100
20
430
480
4
1.8
1.4
2.1
1.3
MI4990NE
MI4990NE
SO-8
Dual
N
Yes
100
20
81
92
17
4.2
3.3
2.1
1.3
MI4990N
MI4990N
SO-8
Dual
N
No
100
20
81
92
17
4.2
3.3
2.1
1.3
MI4970N
MI4970N
SO-8
Dual
N
No
200
20
300
340
8.6
2.2
1.7
2.1
1.3
MI4966N
MI4966N
SO-8
Dual
N
No
60
20
28
34
9
7.1
5.6
2.1
1.3
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